IndiumV3, Chine, Analysis, bibRecord, 000071

Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

Identifieur interne : 000071 ( Chine/Analysis ); précédent : 000070; suivant : 000072

Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

Auteurs : RBID : Pascal:13-0305283

Descripteurs français

Pascal (Inist)
- Cristallisation, Cinétique, Propriété électrique, Etat amorphe, Indium Oxyde, Couche mince, Vapeur eau, Dépôt pulvérisation, Caractérisation, Diffraction RX, 7361.

English descriptors

KwdEn :
- Amorphous state, Characterization, Crystallization, Electrical properties, Indium Oxides, Kinetics, Sputter deposition, Steam, Thin films, XRD.

Abstract

Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 × 10^-5 Torr water vapor pressure was determined to be 30.7 kJ mol^-1, which is higher than 18.9 kJ mol^-1 for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.

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to stream Main, to step Corpus: 000722
to stream Main, to step Repository: 000326
to stream Chine, to step Extraction: 000071

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Pascal:13-0305283

Le document en format XML

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<author><name>MEIHAN WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Scientific Research Center, Shenyang University, No. 21 Wanghua South Street</s1>
<s2>Shenyang 110044</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shenyang 110044</wicri:noRegion>
</affiliation>
</author>
<author><name>HAO LEI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Surface Engineering of Materials, Institute of Metal Research, CAS, No. 72 Wenhua Road</s1>
<s2>Shenyang 110016</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shenyang 110016</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Seki, Yoshiyuki" uniqKey="Seki Y">Yoshiyuki Seki</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama</s1>
<s2>Atsugi, Kanagawa 243-0297</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Atsugi, Kanagawa 243-0297</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Seki, Shigeyuki" uniqKey="Seki S">Shigeyuki Seki</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electronic Engineering, Sendai National College of Technology, 4-16-1 Ayashichuo, Aoba-ku</s1>
<s2>Sendai, Miyagi 989-3128</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Sendai, Miyagi 989-3128</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sawada, Yutaka" uniqKey="Sawada Y">Yutaka Sawada</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama</s1>
<s2>Atsugi, Kanagawa 243-0297</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Atsugi, Kanagawa 243-0297</wicri:noRegion>
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</author>
<author><name sortKey="Hoshi, Yoichi" uniqKey="Hoshi Y">Yoichi Hoshi</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama</s1>
<s2>Atsugi, Kanagawa 243-0297</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Atsugi, Kanagawa 243-0297</wicri:noRegion>
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<author><name>SHAOHONG WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Scientific Research Center, Shenyang University, No. 21 Wanghua South Street</s1>
<s2>Shenyang 110044</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shenyang 110044</wicri:noRegion>
</affiliation>
</author>
<author><name>LIXIAN SUN</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Materials and Thermochemistry Laboratory, Dalian Institute of Chemical Physics, Chinese Academy of Sciences</s1>
<s2>Dalian 116023</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Dalian 116023</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0305283</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0305283 INIST</idno>
<idno type="RBID">Pascal:13-0305283</idno>
<idno type="wicri:Area/Main/Corpus">000722</idno>
<idno type="wicri:Area/Main/Repository">000326</idno>
<idno type="wicri:Area/Chine/Extraction">000071</idno>
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<seriesStmt><idno type="ISSN">1388-6150</idno>
<title level="j" type="abbreviated">J. therm. anal. calorim.</title>
<title level="j" type="main">Journal of thermal analysis and calorimetry</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous state</term>
<term>Characterization</term>
<term>Crystallization</term>
<term>Electrical properties</term>
<term>Indium Oxides</term>
<term>Kinetics</term>
<term>Sputter deposition</term>
<term>Steam</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cristallisation</term>
<term>Cinétique</term>
<term>Propriété électrique</term>
<term>Etat amorphe</term>
<term>Indium Oxyde</term>
<term>Couche mince</term>
<term>Vapeur eau</term>
<term>Dépôt pulvérisation</term>
<term>Caractérisation</term>
<term>Diffraction RX</term>
<term>7361</term>
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<front><div type="abstract" xml:lang="en">Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 × 10<sup>-5</sup>
 Torr water vapor pressure was determined to be 30.7 kJ mol<sup>-1</sup>
, which is higher than 18.9 kJ mol<sup>-1</sup>
 for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor</s1>
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<fA11 i1="01" i2="1"><s1>MEIHAN WANG</s1>
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<fA11 i1="02" i2="1"><s1>HAO LEI</s1>
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<fA11 i1="03" i2="1"><s1>SEKI (Yoshiyuki)</s1>
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<fA11 i1="04" i2="1"><s1>SEKI (Shigeyuki)</s1>
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<fA11 i1="07" i2="1"><s1>SHAOHONG WANG</s1>
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<fA14 i1="01"><s1>Scientific Research Center, Shenyang University, No. 21 Wanghua South Street</s1>
<s2>Shenyang 110044</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Surface Engineering of Materials, Institute of Metal Research, CAS, No. 72 Wenhua Road</s1>
<s2>Shenyang 110016</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama</s1>
<s2>Atsugi, Kanagawa 243-0297</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Electronic Engineering, Sendai National College of Technology, 4-16-1 Ayashichuo, Aoba-ku</s1>
<s2>Sendai, Miyagi 989-3128</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Materials and Thermochemistry Laboratory, Dalian Institute of Chemical Physics, Chinese Academy of Sciences</s1>
<s2>Dalian 116023</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
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<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA60><s1>P</s1>
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<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Journal of thermal analysis and calorimetry</s0>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 × 10<sup>-5</sup>
 Torr water vapor pressure was determined to be 30.7 kJ mol<sup>-1</sup>
, which is higher than 18.9 kJ mol<sup>-1</sup>
 for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C61</s0>
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<s5>07</s5>
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<s5>08</s5>
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<s5>10</s5>
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<s5>10</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>7361</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>76</s5>
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<fN21><s1>287</s1>
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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |type=    RBID
   |clé=     Pascal:13-0305283
   |texte=   Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
}}

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Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri